Intel’s 14A process, its upcoming 1.4nm-class manufacturing technology, is showing stronger-than-anticipated results as defect density continues to fall. Speaking at Deutsche Bank’s 2026 Technology Conference, Intel Chief Financial Officer David Zinsner said the node is outperforming the company’s internal targets and drew a comparison to one of Intel’s most successful processes in recent history.
According to Zinsner, both Intel’s in-house design teams and outside customers are now actively engaged with the technology. Internal groups are building products around 14A, while external clients have begun asking about the production volumes Intel can supply. That external interest, he noted, has shifted from theoretical to practical.
Why Intel Is Comparing 14A to 22nm
Zinsner said 14A is Intel’s best process since its 22nm technology from the early 2010s. “When you look at the defect density, 14A is tracking better than the target curve we had for 14A,” he told the conference. “It is also doing better than any of the previous nodes in terms of how quickly we are bringing down the defects. In fact, we have not seen this performance since 22nm, which is arguably one of the best nodes Intel has ever put out.”
There are important caveats to that comparison. Intel plans to begin risk production of its own 14A products in the second half of 2027, with high-volume manufacturing set for 2028, placing mass production roughly two years out. The defect density measured today does not necessarily match what 22nm looked like at the equivalent stage in 2010. In addition, advances in wafer processing and inspection tools mean the definition of a defect may differ from 16 years ago. Defect density also does not translate directly into product yield.
A More Complex Node Than Its Predecessors
Intel’s 22nm was the company’s first process to use FinFET transistors and, at launch, ranked as the most advanced production technology in the world. Rivals did not adopt FinFET designs until their 14nm and 16nm-class nodes in 2014 and 2015. By contrast, 14A will rely on second-generation gate-all-around RibbonFET transistors, second-generation backside power delivery known as PowerDirect, and High-NA EUV lithography to handle its highly complex patterning.
The comparison to 22nm’s successors is notable given Intel’s recent manufacturing history. The company delayed 14nm mass production by a year due to yield problems, struggled with its first-generation 10nm node, cancelled 20A, and saw high defect density on 18A even as it reached a high-volume milestone. Intel also shared little detail about the progress of its Intel 4 and Intel 3 nodes.
Customer Demand Is Building
Signs point to growing confidence in 14A, with external customers already developing products for the node. Zinsner emphasized that internal teams are among the toughest to convince. “We are now seeing demand from our internal customers on 14A [and] they are actually probably the most cynical bunch out of anybody,” he said, adding that these teams are now designing for the process.
Intel plans to start risk production on 14A in the second half of 2027 and reach high-volume manufacturing in 2028.
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